Principal / Senior Principal Microelectronics Device Engineer

About the role

• RELOCATION ASSISTANCE: Relocation assistance may be available
• CLEARANCE REQUIRED FOR START: No
• CLEARANCE TYPE: Secret
• TRAVEL: Yes, 10% of the Time

About the role

At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon.

We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work — and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history.

The Northrop Grumman Microelectronics Center (NGMC) has an opening for a Microelectronics Device Engineer to join our team of qualified, diverse individuals at our Space Park Foundry (SPF) location in Redondo Beach, CA.

In the NGMC we design, manufacture, and test semiconductor products for internal and commercial production customers as well as emerging technology programs. The SPF semiconductor foundry has unique capabilities supporting a range of production microelectronics technologies (Gallium Arsenide, Indium Phosphide, and Gallium Nitride). SPF provides leading edge technology development in semiconductor materials, processes, devices, and 3D heterogeneous integration (3DHI). SPF’s discriminating technological capabilities enable many of Northrop Grumman’s ground, avionic, and space systems.

The selected candidate will support the research and development of advanced microelectronics products for the Northrop Grumman Microelectronics Center. Candidate will be responsible for leading the development and maturation of novel III-V semiconductor technologies including, but not limited to, advanced GaN and InP technology nodes.

Candidate will be responsible for advancing new technologies from early research and development through production. The ideal candidate will be able to thrive in fast-paced, multidisciplinary teams. Responsibilities will include millimeter wave transistor design and simulation, experimental device development, root cause analysis, and RF device characterization.

Candidate must be comfortable in a lab environment and be able to collaborate closely with process engineers, circuit designers, and test engineers. The selected candidate should have demonstrable subject matter expertise in semiconductor device physics and device development, with an emphasis on transistor devices.

This requisition may be filled as a Principal Microelectronics Device Engineer or Senior Principal Microelectronics Device Engineer

Basic Qualifications for Principal Microelectronics Device Engineer

• Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or other related STEM discipline with 5 years of relevant experience (3 years with a Master’s degree and 0 with a PhD).
• Expertise in solid-state or semiconductor materials physics
• Demonstrated expertise in compound semiconductor device physics
• Experience with semiconductor device processing
• Experience in project or team leadership roles
• Ability to obtain and maintain a DoD Secret clearance
• US Citizenship required

Basic Qualifications for Senior Principal Microelectronics Device Engineer

• Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or other related STEM discipline with 8 years of relevant experience (6 years with a Master’s degree and 3 with a PhD).
• US Citizenship required

Preferred Qualifications

• Ph.D. degree in Electrical Engineering, Materials Engineering, or Physics
• Demonstrated expertise with one or more of the following: diodes, field effect transistors (FETs), high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs)
• Direct experience with GaN and/or InP transistor development
• Demonstrated track record of applying scientific principles to advance device performance and achieve engineering objectives
• Experience with technology maturation and transition from R&D to manufacturing
• Experience with MMIC fabrication
• Exposure to MMIC design
• Excellent communication, interpersonal skills, and the ability to interface with all levels of employees and management
• Proven track record in leading multidisciplinary teams
• Ability to prioritize and manage tasks efficiently in a dynamic environment
• Demonstrated professional accomplishments and publication record related to semiconductor technology R&D and maturation

Primary Level Salary Range

$114,000.00 - $171,000.00

Secondary Level Salary Range

$142,200.00 - $213,400.00

The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions.

Depending on the position, employees may be eligible for overtime, shift differential, and a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.

The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates.